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| savantic semiconductor product specification silicon npn power transistors 2SD1677 d escription with to-3pn package high breakdown voltage high reliability fast speed applications for tv horizontal output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a t a =25 2.5 p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1677 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 800 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 6 v v cesat collector-emitter saturation voltage i c =4.5a ;i b =2a 5.0 v v besat base-emitter saturation voltage i c =4.5a ;i b =2a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe dc current gain i c =0.5a ; v ce =5v 8 savantic semiconductor product specification 3 silicon npn power transistors 2SD1677 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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